- Various structures of opamp for sensor interface
- The best one shows only 6 % degradation on output amplitude with 5 Mrad iiradiation.
- Novel compensation technique included for radiation effects on ADC
- Successfully operated at 1 Mrad irradiation
- 1st order cancelation technique included for radiation effects on BGR
- Successfully operated at 2 Mrad irradiation
- Design optimization for radiation environment
- Successfully operated at 3.5 Mrad irradiation
- Novel error detection technique included for single event effects (SEEs)
- Can be exploited in any digital systems
- Novel architecture of compact SRAM cell for single event effects (SEEs)
- Can be operated up to 100 MeV (LET in silicon)